Class AB push-pull drive circuit, drive method therefor and class AB electronic circuit using the same

ABSTRACT

A class AB push-pull drive circuit has two NPN transistors Q 1 , Q 2  and two PNP transistors Q 3 , Q 4 , the emitters of which are connected together. A constant voltage circuit maintains voltages between the bases of transistors Q 1  and Q 3  and between the bases of transistors Q 2  and Q 4  constant. A differential input voltage is applied across the bases of the transistors Q 1  and Q 2 . The collector currents in the transistors Q 1 , Q 3 , Q 2  and Q 4  increase or decrease in an exponential and differential manner. When the collector currents are in their differential relationship, they are inverted and added to provide a class AB drive current and to increase the output amplitude. The symmetry can also be improved. Since any difference between signal amplification path lengths is eliminated, a differential phase between paths is less likely to be generated in the high-frequency region. Since there is no feedback or the like for class AB drive, it is difficult for any abnormal oscillation to be produced. Since the constant voltage circuits are formed by diodes, the temperature characteristics of the transistors Q 1  to Q 4  can be compensated. Furthermore, the class AB push-pull drive circuit can be driven by a relatively low voltage. The bipolar transistors Q 1  -Q 4  may be replaced by FETs.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a circuit for driving a load in a class AB push-pull manner, such as a loudspeaker drive circuit in an acoustic system, a motor drive circuit in a servo system or an output circuit in an operational amplifier, and a drive method for such a load driving circuit.

2. Description of the Prior Art

There is known such a class AB push-pull drive circuit as shown in FIG. 23, for example. The illustrated circuit comprises an NPN transistor Q₁₀₁ and a PNP transistor Q₁₀₂, the emitters of which are connected to each other. A positive supply voltage V_(cc) is applied to the collector of the transistor Q₁₀₁ while a negative supply voltage V_(ss) is applied to the collector of the transistor Q₁₀₂. A constant current source Q₁₀₃ is connected between the collector and base of the transistor Q₁₀₁ while a constant current source Q₁₀₄ is connected between the base and collector of the transistor Q₁₀₂. Two diodes D₁₀₁ and D₁₀₂ are further connected in series between the bases of the transistors Q₁₀₁ and Q₁₀₂. These diodes D₁₀₁ and D₁₀₂ are in a forward biased direction relative to the P-N junction between the base and emitter of the transistors Q₁₀₁ and Q₁₀₂. An external voltage V_(i) is applied to the connecting point of the diodes D₁₀₁ and D₁₀₂ while the emitters of the transistors Q₁₀₁ and Q₁₀₂ output a drive current i₀ toward a load in the post-stage (not shown).

The illustrated circuit can make the drive current i₀ class AB, as shown in FIG. 24. More particularly, if it is assumed that the emitter voltage of the transistors Q₁₀₁ and Q₁₀₂ is V₀, the collector currents i_(n) and i_(p) of the transistors Q₀₁₀₁ and Q₁₀₂ will vary relative to V_(i) -V₀ in such a manner as shown by broken line in FIG. 24. As a result, the drive current i_(o) =i_(n) -i_(p) will vary as shown by solid line in FIG. 24.

FIG. 25 shows another layout of the class AB push-pull drive circuit. This circuit uses an N-channel FET (Field-Effect Transistor) Q₁₀₅ in place of the NPN transistor Q₁₀₁ as in the prior art shown in FIG. 23 and a P-channel FET Q₁₀₆ in place of the PNP transistor Q₁₀₂. The sources of the FET Q₁₀₅ and Q₁₀₆ are connected to each other. The connected sources output a drive current i₀ toward a load in the post-stage (not shown). A positive supply voltage V_(DD) is applied to the drain of the FET Q₁₀₅ while a negative supply voltage V_(ss) is applied to the drain of the FET Q₁₀₆. A constant current source Q₁₀₃ is connected between the gate and drain of the FET Q₁₀₅ while a constant current source Q₁₀₄ is connected between the gate and drain of the FET Q₁₀₆. Further, the circuit uses an N-channel FET Q₁₀₇ in place of the diode D₁₀₁ shown in FIG. 23 and a P-channel FET Q₁₀₈ in place of the diode Q₁₀₂. The gates and drains of the FETs Q₁₀₇ and Q₁₀₈ are externally short-circuited to one another, with the sources thereof receiving a voltage V_(i). This circuit can also provide such characteristics as shown in FIG. 24.

However, such circuits as shown in FIGS. 23 and 25 cannot be used if the supply voltages V_(cc), V_(DD) or V_(ss) are low. In other words, the base voltage of the transistor Q₁₀₁ or the gate voltage of the FET Q₁₀₅ cannot exceed the positive supply voltage V_(cc) or V_(DD). Actually, the base voltage of the transistor Q₁₀₁ or the gate voltage of the FET Q₁₀₅ will further be limited since the transistor Q₁₀₁ or the FET Q₁₀₅ has a drop in the voltage between the base and emitter or between the gate and source. Similarly, the base voltage of the transistor Q₁₀₂ or the gate voltage of the FET Q₁₀₆ cannot be lower than the negative supply voltage V_(ss). There is also a drop in the voltage between the base and emitter of the transistor Q₁₀₂ or between the gate and source of the FET Q₁₀₆. In these prior arts, since the potential difference between the positive and negative supply voltages cannot be fully utilized, the amplitude of the output voltage V₀ is smaller than a level determined by the potential difference. In other words, these circuits of the prior art cannot be driven by a relatively low voltage source.

To overcome such problems, there has been proposed such a class AB push-pull drive circuit as shown in FIG. 26. This circuit comprises a PNP transistor Q₁₁₂ and an NPN transistor Q₁₁₄, the collectors of which are connected to each other. A positive supply voltage V_(cc) is applied to the emitter of the transistor Q₁₁₂ while a negative supply voltage V_(ss) is applied to the emitter of the transistor Q₁₁₄. The collectors of the transistors Q₁₁₂ and Q₁₁₄ output a drive current i₀ toward a load in the post-stage, with a voltage being V₀ at this point. If it is assumed that the collector current of the transistor Q₁₁₂ is i_(p) and the collector current of the transistor Q₁₁₄ is in, the outputted drive current i₀ becomes i_(p) -i_(n).

The transistors Q₁₁₂ and Q₁₁₄ are connected to PNP and NPN transistors Q₁₁₁, Q₁₁₃, respectively. An external voltage V_(i) is applied to the base of the transistor Q₁₁₁ and also to the collector of an NPN transistor Q₁₁₈ which forms part of a differential input circuit 101. In addition to the transistor Q₁₁₈, the differential input circuit 101 comprises another NPN transistor Q₁₁₇ having its emitter connected to that of the first transistor Q₁₁₈, a constant current source Q₁₁₉ for supplying a constant current to the emitters of the transistors Q₁₁₇ and Q₁₁₈, and constant current sources Q₁₂₀ and Q₁₂₁ for supplying constant currents to the collectors of the transistors Q₁₁₇ and Q₁₁₈. The transistor Q₁₁₈ is connected in parallel to two diodes D₁₁₁ and D₁₁₂ which are connected in series to each other in the forward biased direction relative to the P-N junction between the base and emitter of the transistor Q₁₁₈. The diodes D₁₁₁ and D₁₁₂ receive a constant current from a constant current source Q₁₂₂. Thus, the voltage between the base and emitter of the transistor Q₁₁₈ is maintained constant. The base of the transistor Q₁₁₃ is connected to the collector of the transistor Q₁₁₇ which is paired with the transistor Q₁₁₈.

The base of the transistor Q₁₁₇ is connected to the collector of the PNP transistor Q₁₁₅ and also to the emitter of the PNP transistor Q₁₁₆. A positive supply voltage V_(cc) is applied to the emitter of the transistor Q₁₁₅ while a negative supply voltage V_(ss) is applied to the collector of the transistor Q₁₁₆. In the circuit of the prior art, therefore, the voltage between the base and emitter of the transistor Q₁₁₂ is transferred between the base and emitter of the transistor Q₁₁₆, so that the sum of the voltage between the base and emitter of the transistor Q₁₁₄ and the voltage between the base and emitter of the transistor Q₁₁₂ is applied to the base of the transistor Q₁₁₇. As described, the base of the transistor Q₁₁₇ receives a voltage relating to two P-N junctions between the diodes D₁₁₁ and D₁₁₂. The differential input circuit 101 compares the voltages relating to these diodes with the voltages between the base and emitter in the transistors Q₁₁₄ and Q₁₁₂. Thus, the current i₀ can be driven in class AB.

Unlike the circuit shown in FIG. 23, the circuit of FIG. 26 can be driven by a relatively low supply voltage since the amplitude range of the output voltage V₀ will not be affected by the voltage between the base and emitter in the transistors Q₁₁₂ and Q₁₁₄ which relate to the output. However, such a circuit of the prior art also raises other problems.

First, the circuit of FIG. 26 produces a phase difference between signals amplified by two push-pull amplification paths, since they provide a large path difference. More particularly, the circuit of FIG. 26 provides two amplification paths, a first path of the base of the transistor Q₁₁₁ →the emitter thereof→the base of the transistor Q₁₁₂ →the collector thereof and a second path of the base of the transistor Q₁₁₁ →the emitter thereof→the base of the transistor Q₁₁₅ →the collector thereof→the base of the transistor Q₁₁₇ →the collector thereof→the base of the transistor Q₁₁₃ →the emitter thereof→the base of a transistor Q₁₁₄ →the collector thereof. As can be seen from FIG. 26, the difference between these two signal amplification paths is very large.

Second, the circuit of FIG. 26 includes two closed negative-feedback loops for class AB drive. These closed negative-feedback loops tend to oscillate. More particularly, these two closed negative-feedback loops are a first loop of the base of the transistor Q₁₁₁ →the emitter thereof→the base of the transistor Q₁₁₅ →the collector thereof→the base of the transistor Q₁₁₇ →the emitter thereof→the emitter of the transistor Q₁₁₈ →the collector thereof→the base of the transistor Q₁₁₁ and a second loop of the base of the transistor Q₁₁₃ →the emitter thereof→the base of the transistor Q₁₁₆ →the emitter thereof→the base of the transistor Q₁₁₇ →the collector thereof→the base of the transistor Q₁₁₃. Both of these loops tend to oscillate.

SUMMARY OF THE INVENTION

It is a first object of the present invention to provide a class AB push-pull drive circuit and drive method therefor, which can increase the output amplitude thereof to perform a class AB drive to a load even if the supply voltage is relatively low. A second object of the present invention is to provide a class AB push-pull drive circuit and a drive method therefor, which can provide a reduced difference between push-pull signal amplification paths so that no phase difference between signals will be produced, for example, in a high-frequency region. A third object of the present invention is to provide a class AB push-pull drive circuit and a drive method therefor which do not require any closed negative-feedback loop for class AB drive and which can thus make the class AB drive more stable with reduced oscillation. A fourth object of the present invention is to provide a class AB push-pull drive circuit and a drive method therefor which can be made more stable by temperature-compensating the operation.

In a first aspect of the present invention, there is provided a class AB push-pull drive circuit comprising:

a) first to fourth semiconductor elements each having a supply electrode, a drive electrode and a control electrode, the first and second semiconductor elements having a first polarity and the third and fourth semiconductor elements having a second polarity, the supply electrodes of the first to fourth semiconductor elements being connected together, a current substantially equal to that of each respective supply electrode flowing through each of the drive electrodes, the current flowing in each of the drive electrodes being controlled by the corresponding one of the control electrodes;

b) a first constant voltage circuit for maintaining a constant voltage between the control electrodes of the first and third semiconductor elements;

c) a second constant voltage circuit for maintaining a constant voltage between the control electrodes of the second and fourth semiconductor elements; and

d) a first output circuit for outputting a class AB drive current which is generated by inverting and adding the currents flowing in the drive electrodes of the first and third semiconductor elements.

In a second aspect of the present invention, there is provided an class AB push-pull drive circuit comprising:

a) first to fourth semiconductor elements each having a supply electrode, a drive electrode and a control electrode, the first and second semiconductor elements having a first polarity and the third and fourth semiconductor elements having a second polarity, the supply electrodes of the first to fourth semiconductor elements being connected together, a current substantially equal to that of each respective supply electrode flowing through each of the drive electrodes, the current flowing in each of the drive electrodes being controlled by the corresponding one of the control electrodes;

b) a first constant voltage circuit for maintaining a constant voltage between the control electrodes of the first and third semiconductor elements;

c) a second constant voltage circuit for maintaining a constant voltage between the control electrodes of the second and fourth semiconductor elements; and

d) a second output circuit for outputting a class AB drive current which is generated by inverting and adding the currents flowing in the drive electrodes of the second and fourth semiconductor elements.

In the first and second aspects, the voltage between the control electrodes (bases or gates) of the first and third semiconductor elements is maintained constant by the first constant voltage circuit while the voltage between the control electrodes of the second and fourth semiconductor elements is maintained constant by the second constant voltage circuit. The supply electrodes (emitters or sources) of these semiconductor elements (e.g., bipolar transistors or FETs) are connected together. Therefore, the drive electrode currents (collector or drain currents) of the semiconductor elements will increase or decrease in the exponential function manner (bipolar transistor) or in the quadratic function manner (FET) relative to the voltage between the control electrodes of the first and second semiconductor elements or the voltage between the control electrodes of the third and fourth semiconductor elements. The drive electrode currents of the first and fourth semiconductor elements increases or decreases with those of the second and third semiconductor elements in the differential relationship. When the first output circuit is used to invert and add the drive electrode currents of the first and third semiconductor elements or when the second output circuit is used to invert and add the drive electrode currents of the second and fourth semiconductor elements, therefore, a class AB drive current can be provided. At this time, the circuit of the present invention will not produce any phase difference between signals in a high-frequency region, since it provides a reduced difference between signal amplification paths for class AB drive. The circuit of the present invention does not require any loop for class AB drive. Thus, the circuit can operate more stably with less abnormal oscillation.

In a third aspect of the present invention, there is provided an class AB push-pull drive circuit comprising:

a) first to fourth semiconductor elements each having a supply electrode, a drive electrode and a control electrode, the first and second semiconductor elements having a first polarity and the third and fourth semiconductor elements having a second polarity, the supply electrodes of the first to fourth semiconductor elements being connected together, a current substantially equal to that of each respective supply electrode flowing through each of the drive electrodes, the current flowing in each of the drive electrodes being controlled by the corresponding one of the control electrodes;

b) a first constant voltage circuit for maintaining a constant voltage between the control electrodes of the first and third semiconductor elements;

c) a second constant voltage circuit for maintaining a constant voltage between the control electrodes of the second and fourth semiconductor elements;

d) a first output circuit for outputting a class AB drive current which is generated by inverting and adding the currents flowing in the drive electrodes of the first and third semiconductor elements; and

e) a second output circuit for outputting another class AB drive current which is generated by inverting and adding the currents flowing in the drive electrodes of the second and fourth semiconductor elements.

In the third aspect of the present invention, the first and second output circuits are both provided. Thus, the circuit can output the class AB drive currents in a differential manner. More particularly, an electronic class AB circuit for outputting the class AB drive currents in the differential manner can be realized since the first class AB drive current provided by the first and third semiconductor elements is in the differential relationship with the second class AB drive current provided by the second and fourth semiconductor elements.

According to the present invention, the first and second output circuits are formed by current mirror circuits. First and third current mirror circuits, respectively corresponding to the first and third semiconductor elements, are connected to each other such that the output currents from these semiconductor elements are inverted and added to generate a class AB drive current. Similarly, second and fourth current mirror circuits, respectively corresponding to the second and fourth class AB drive currents, are connected to each other such that the output currents from these semiconductor elements are inverted and added to generate a class AB drive current. Therefore, a load in the post-stage can be driven through an increased current by setting an increased mirror ratio in the current mirror circuits. The connections between the first and third current mirror circuits and between the second and fourth current mirror circuits can be realized by push-pull connecting the output transistors of the current mirror circuits.

The first to fourth semiconductor elements may be bipolar transistors or FETs. With bipolar transistors, the characteristics of the collector currents are of exponential function relative to inputs. The characteristics of the FET drain currents are of quadratic function relative to inputs.

Each of the first and second constant voltage circuits includes a first or second temperature characteristic compensating means. The temperature-to-voltage characteristics of the first and third semiconductor elements is compensated by the first temperature characteristic compensating means while the temperature-to-voltage characteristics of the second and fourth semiconductor elements are compensated by the second temperature characteristic compensating means. Such an arrangement can realize a class AB push-pull drive circuit which is stable relative to temperature independently of the temperature-to-voltage characteristics of each of the semiconductor elements between the control and supply electrodes.

Each of the temperature characteristic compensating means may be formed by two temperature compensating elements. More particularly, four temperature compensating elements are provided each having its temperature-to-voltage characteristics substantially equal to those of the corresponding one of the first to fourth semiconductor elements. The first temperature compensating element having its temperature-to-voltage characteristics substantially equal to those of the first semiconductor element is forwardly connected in series to the third temperature compensating element having its temperature-to-voltage characteristics substantially equal to those of the third semiconductor element. The second temperature compensating element having its temperature-to-voltage characteristics substantially equal to those of the second semiconductor element is forwardly connected in series to the fourth temperature compensating element having its temperature-to-voltage characteristics substantially equal to those of the fourth semiconductor element. Further, the series connection between the first and third temperature compensating elements is forwardly connected in parallel to the first and third semiconductor elements while the series connection between the second and fourth temperature compensating elements is forwardly connected in parallel to the second and fourth semiconductor elements. In such a manner, the temperature compensation can preferably be realized.

The temperature compensating elements may be provided by P-N junctions. More particularly, P-N junctions of the same design as those between the control and supply electrodes of the first to fourth semiconductor elements may be used as first to fourth temperature compensating elements. These P-N junctions receive a constant current from the first constant current source.

Where the first to fourth semiconductor elements are formed by bipolar transistors, the P-N junctions are also formed by bipolar transistors of the same design as those of the first to fourth semiconductor elements. By short-circuiting between the collector and base of each of the bipolar transistors, it can provide a P-N junction between the base and emitter. Alternatively, the P-N junction between the base and emitter of a bipolar transistor having the same design as those of the first to fourth semiconductor elements and driven by a biasing bipolar transistor may be used when a circuit for driving the base of the bipolar transistor is used and the base of the biasing transistor is driven by the first constant current source. Alternatively, the P-N junction between the base and emitter of a bipolar transistor having the same design as those of the first to fourth semiconductor elements and driven by a biasing bipolar transistor may be used when a circuit for driving the base of the bipolar transistor is used and the base of the biasing transistor is driven by the second constant current source. If the first to fourth semiconductor elements are formed by FETs, the temperature compensation similar to that of the bipolar transistors can be realized by short-circuiting between the gate and drain of each of the FETs and using the first constant current source. At this time, the second constant current source may be used to drive the gate of the FET. When the class AB push-pull drive circuit is formed into an integrated circuit, the temperature compensation may be further improved by utilizing the bipolar transistors or FETs since they can easily realize components of the same characteristics as those of the first to fourth semiconductor elements.

The present invention further provides three different methods for driving the class AB push-pull drive circuit which are classified depending on in which manner a differential input voltage is applied to the first to fourth semiconductor elements. More particularly, there are a first method, in which the differential input voltage is applied directly to the first and second semiconductor elements; a second method, in which the differential input voltage is applied directly to the third and fourth semiconductor elements; and a third method, in which the differential input voltage is applied to all the semiconductor elements indirectly (i.e., through parts of the first and second constant voltage circuits). All the methods can drive the class AB push-pull drive circuit very well.

The first class AB electronic circuit of the present invention includes a differential input circuit for generating a differential current on application of the differential input voltage, the differential current being then supplied to the first and second constant voltage circuits. The first and second constant voltage circuits are responsive to the differential current to execute the aforementioned function of holding the constant voltage. The second class AB electronic circuit includes first and second differential input circuits which are driven by the same constant current. Each of the first and second differential input circuits is responsive to the differential input voltage for outputting first or second differential current. The first constant voltage circuit directly or indirectly receives the first and second differential currents to execute the constant voltage holding function while the second constant voltage circuit uses the intermediate value between the positive and negative supply voltages as a reference to execute the constant voltage holding function. Thus, the load in the post-stage can be class AB driven even when a difference between the positive and negative supply voltages is relatively small or even if the supply voltage is relatively low.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram showing the primary parts of a first embodiment according to the present invention.

FIG. 2 is a circuit diagram showing the primary parts of a second embodiment according to the present invention.

FIG. 3 is a circuit diagram showing the primary parts of a third embodiment according to the present invention.

FIG. 4 is a view showing the characteristics of collector current where I_(e01) =I_(e02).

FIG. 5 is a view showing the characteristics of collector current where I_(e01) ˜I_(e02).

FIG. 6 is a circuit diagram showing the primary parts of a fourth embodiment according to the present invention.

FIG. 7 is a circuit diagram showing the primary parts of a fifth embodiment according to the present invention.

FIG. 8 is a circuit diagram showing the primary parts of a sixth embodiment according to the present invention.

FIG. 9 is a view showing the characteristics of drain current.

FIGS. 10A, 10B, 10C, 10D, and 10E are views showing various constant voltage circuits usable in the first to third embodiments.

FIGS. 11A, 11B, and 11C are views showing various constant voltage circuits usable in the first to third embodiments.

FIG. 12 is a circuit diagram of a class AB differential output circuit formed by using the circuit relating to the second embodiment of the present invention.

FIG. 13 is a circuit diagram of a class AB differential output circuit formed by using the circuit relating to the fifth embodiment of the present invention.

FIG. 14 is a circuit diagram showing an operational amplifier formed by using the circuit relating to the second embodiment of the present invention.

FIG. 15 is a circuit diagram showing an operational amplifier formed by using the circuit relating to the fifth embodiment of the present invention.

FIG. 16 is a circuit diagram showing an operational amplifier formed by using the circuit relating to the second embodiment of the present invention.

FIG. 17 is a circuit diagram showing an operational amplifier formed by using the circuit relating to the second embodiment of the present invention.

FIG. 18 is a circuit diagram showing an operational amplifier formed by using the circuit relating to the fifth embodiment of the present invention.

FIG. 19 is a circuit diagram showing another output circuit.

FIG. 20 is a circuit diagram showing still another output circuit.

FIG. 21 is a circuit diagram showing a further output circuit.

FIG. 22 is a circuit diagram showing a further output circuit.

FIG. 23 is a circuit diagram showing a first circuit constructed in accordance with the prior art.

FIG. 24 is a view illustrating a class AB push-pull drive circuit constructed according to the prior art.

FIG. 25 is a circuit diagram showing a second circuit constructed in accordance with the prior art.

FIG. 26 is a circuit diagram showing a third circuit constructed in accordance with the prior art.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Some preferred embodiments of the present invention will now be described with reference to the drawings.

a) Arrangements of First to Third Embodiments

FIG. 1 shows the primary parts of a class AB push-pull drive circuit constructed according to the first embodiment of the present invention. The first embodiment includes NPN transistors Q₁, Q₂ and PNP transistors Q₃, Q₄, the emitters of which are connected together. A constant voltage circuit 1 consisting of two diodes D₁ and D₂ is connected between the bases of the transistors Q₁ and Q₃ while a constant voltage circuit 2 consisting of two diodes D₂ and D₄ is connected between the bases of the transistors Q₂ and Q₄. Each of the diodes D₁ to D₄ is forwardly connected to the P-N junction between the base and emitter of the corresponding one of the transistors Q₁ to Q₄. A differential input voltage V₁ is applied across the bases of the transistors Q₁ and Q₂.

FIG. 2 shows a class AB push-pull drive circuit constructed according to the second embodiment of the present invention. The second embodiment is different from the first embodiment in that the differential input voltage V_(i) is applied across the connecting point between the diodes D₁ and D₃ and the connecting point between the diodes D₂ and D₄.

FIG. 3 shows the primary parts of a class AB push-pull drive circuit constructed according to the third embodiment of the present invention. In the third embodiment, the differential input voltage V_(i) is applied across the bases of the transistors Q₃ and Q₄.

In any of these embodiments, the emitters of two NPN transistors Q₁ and Q₂ and the emitters of two PNP transistors Q₃ and Q₄ are connected together. Further, the differential input voltage V_(i) is applied to across the bases of the transistors Q₁ and Q₂ and across the bases of the transistors Q₃ and Q₄ directly or through parts of the voltage circuits 1 and 2. As will be described later, the constant voltage circuits 1 and 2 receive constant currents to maintain the voltages between the bases of the transistors Q₁ and Q₃ and between the bases of the transistors Q₂ and Q₄ constant. According to the first to third embodiments, the class AB push-pull drive circuit which can be driven by a relatively low drive voltage is realized to increase the output amplitude. The circuit also provides a reduced difference in signal paths which results in an improved symmetry and is stable in temperature without the need of any loop for class AB operation.

b) Driving Mechanism of First to Third Embodiments

The driving mechanism of the first to third embodiments will be described below:

The relationship between the base-emitter voltage V_(be) and the emitter outflow current I_(en) of an NPN transistor, the relationship between the emitter-base voltage V_(eb) and the emitter inflow current I_(ep) of a PNP transistor and the relationship between the voltage V_(d) and the current I_(d) of a P-N junction diode can be generally represented by the following formulas:

    V.sub.be =V.sub.T ·ln (I.sub.en /I.sub.sn)

    V.sub.eb =V.sub.T ·ln (I.sub.ep /I.sub.sp)

    V.sub.d =V.sub.T ·ln (I.sub.d /I.sub.sd)          (1)

    V.sub.T =k·T/q                                    (2)

where I_(sn), I_(sp) and I_(sd) are reverse-direction saturation currents determined by the manufacturing process of the transistors or diodes, and the size of the transistors or diodes used; k is Boltzmann's constant (=1.38066×10⁻²³ (J/K)); and q is a unit charge=1.60216×10⁻¹⁹ (C). Therefore, the voltage V_(T) depending on the absolute temperature T (K) is about 26 (mV) at room temperature and the temperature coefficients of the above voltages V_(be), V_(eb) and V_(d) become equal to about -2 mV/° C.

To illustrate the operation of each of the embodiments in simplified manner, it is now assumed that the transistors Q₁ and Q₂ are of the same size; the transistors Q₃ and Q₄ are of the same size; and the constant voltage circuits 1 and 2 are of the same size. It is also assumed that the voltage drops of the constant voltage circuits 1 and 2 are equal to each other and also equal to E_(s). Further, the emitter currents and base-emitter voltages of the transistors Q₁ to Q₄ are respectively represented by I_(e1) to I_(e4) and V_(be1) to B_(be4) and the emitter current when the differential input voltage V_(i) is equal to zero is represented by I_(e0). A formula (3) obtained when the aforementioned formula (1) is applied to the transistors Q₁ and Q₂, a formula (4) obtained when the aforementioned formula (1) is applied to the transistors Q₃ and Q₄, a formula (5) obtained when the aforementioned formula (1) is applied the transistors Q₁ and Q₃ and a formula (6) obtained when the aforementioned formula (1) is applied to the transistors Q₁ and Q₃, when the differential input voltage V_(i) is equal to zero, are as follows: ##EQU1##

Since the emitters of the transistors Q₁ to Q₄ are connected together, the following formula is established:

    I.sub.e1 +I.sub.e2 =I.sub.e3 +I.sub.e4                     (7)

A formula (8) obtained by comparing the formulas (3) and (4), a formula (9) obtained by the comparison result of the formulas (5) and (6) and by the formula (8), and a formula (10) obtained by comparing the formulas (7) and (8), are as

    I.sub.e1 /I.sub.e2 =I.sub.e4 /I.sub.e3                     (8)

    I.sub.e1 ·E.sub.e3 =I.sub.e2 ·I.sub.e4 =I.sub.e0.sup.2 (9)

    I.sub.e1 =I.sub.e4 ·E.sub.e2 =I.sub.e3            (10)

By modifying the formulas (3), (4), (9) and (10), the following formulas (11) to (13) are obtained: ##EQU2##

Thus, the emitter current E_(e1) of the transistor Q₁ becomes equal to the emitter current I_(e4) of the transistor Q₄ while the emitter current I_(e2) of the transistor Q₂ becomes equal to the emitter current I_(e3) of the transistor Q₃. The emitter currents E_(e1), I_(e4) and I_(e2), I_(e3) exponentially increase or decrease relative to the differential input voltage V_(i), the former E_(e1), I_(e4) and latter I_(e2), I_(e3) being in differential relationship to each other. In addition, as is well known, the emitter current of a transistor is substantially equal to the collector current of the same. Therefore, the characteristics of the collector currents I₁ to I₄ of the respective transistors Q₁ to Q₄ in each of the aforementioned embodiments relative to the differential input voltage V_(i) are as shown in FIG. 4. As will be apparent therefrom, differential currents between the currents I₁ and I₃ and between the currents I.sub. 2 and I₄ become class AB currents.

When an output circuit for inverting and adding the currents is used with the circuits shown in FIGS. 1 to 3, a load supplied with the currents through the output circuit can be driven as in class AB. Even where a plurality of signal amplification paths are generated, a difference between the paths can be eliminated. Therefore, any phase difference between signals in the high-frequency region can be prevented. Further, it is difficult any abnormal oscillation to be created, since the circuit does not require a loop for class AB drive. In addition, the class AB push-pull drive circuit will be more stable in temperature by compensating the temperature characteristics of the P-N junction between the base and emitter of each of the transistors Q₁ to Q₄ through the diodes D₁ to D₄, since the constant voltage circuits 1 and 2 are defined by the diodes D₁ to D₄.

FIG. 5 shows the characteristics of the collector currents I₁ to I₄ when the emitter current I_(e01) of the transistor Q₁ is not equal to the emitter current I_(e02) of the transistor Q₂ when the differential input voltage V_(i) is equal to zero. Such characteristics as shown in FIG. 5 can be represented by the following formulas: ##EQU3##

As will be apparent from these graph and formulas, the class AB current can be similarly obtained.

c) Arrangements of Fourth to Sixth Embodiments

FIG. 6 shows the primary parts of a class AB push-pull drive circuit constructed according to the fourth embodiment of the present invention. The fourth embodiment uses N-channel FETs Q₅ and Q₆ in place of the NPN transistors Q₁ and Q₂ in the first embodiment and also utilizes P-channel FETs Q₇ and Q₈ in place of the PNP transistors Q₃ and Q₄. The sources of the FETs Q₅ to Q₈ are connected together. The constant voltage circuit 1 is formed by N-channel FET Q₉ and P-channel FET Q₁₁, the gates and drains of which are connected together. The constant voltage circuit 2 is formed by N-channel FET Q₁₀ and P-channel FET Q₁₂, the gates and drains of which are connected together. Each of the FETs Q₉ to Q₁₂ is connected in the forward biased direction relative to the gate-source voltage of the corresponding one of the FETs Q₅ to Q₈. A differential input voltage V_(i) is applied to between the gates of the FETs Q₅ and Q₆.

FIG. 7 shows a class AB push-pull drive circuit constructed according to the fifth embodiment of the present invention. The fifth embodiment is different from the fourth embodiment in that the differential input voltage V_(i) is applied across the connecting point of the FETs Q₉ and Q₁₁ and the connecting point of the FETs Q₁₀ and Q₁₂.

FIG. 8 shows a class AB push-pull drive circuit constructed according to the sixth embodiment of the present invention. In the sixth embodiment, the differential input voltage V_(i) is applied across the gate of the FET Q₇ and the gate of the FET Q₈.

In any of the fourth to sixth embodiments, the sources of the two N-channel FETs Q₅, Q₆ and sources of the two P-channel FETs Q₇, Q₈ are connected together. Further, the differential input voltage V_(i) is applied directly across the gates of the FETs Q₅ and Q₆, or directly across the gates of the FETs Q₇ and Q₈, or through parts of the voltage circuits 1 and 2. As in the first to third embodiments, the constant voltage circuits 1 and 2 receive a constant current to maintain the voltage between the base of the FET Q₅ and the gate of the FET Q₇ or between the gate of the FET Q₆ and the gate of the FET Q₈ constant. According to the fourth to sixth embodiments, thus, the class AB push-pull drive circuit which can be driven by a relatively low voltage is realized to increase the output amplitude. The circuit also reduces the difference between signal path lengths, which results in improved symmetry. Further, the class AB push-pull drive circuit can be more stable in temperature. The circuit can be implemented without the need of any loop for class AB drive.

d) Driving Mechanism of Fourth to Sixth Embodiments

The driving mechanism of the fourth to sixth embodiment will now be described.

The drain currents I_(dn) and I_(pn) of N-channel and P-channel FETs are generally represented by the following formulas: ##EQU4## where q=unit charge;

μ_(n) and μ_(p) =mobility of electron and hole;

C_(0X) =thickness of gate oxide film;

W₁ and W₂ =gate width;

L₁ and L₂ =gate length;

V_(gs1) and V_(gs2) =gate-source voltage;

V_(t1) and V_(t2) =threshold voltage;

K_(n) =μ_(n) (C_(0X) W₁ /2L₁);

K_(p) =μ_(p) (C_(0X) W₂ /2L₂);

V_(g1) =V_(gs1) -V_(t1) ;

V_(g2) =V_(gs2) -V_(t2) ;

Subscript 1=N channel; and

Subscript 2=P channel.

For illustration, it is assumed that the FETs Q₅ and Q₆ are of the same size; that the FETs Q₇ and Q₈ are of the same size; and that the voltage drops of the constant voltage circuits 1 and 2 are equal to each other. It is also assumed that the absolute value of K_(n) is equal to that of K_(p) (K=K_(n) =-K_(p)). When the drain currents of the FETs Q₅ to Q₈ are respectively represented by I₅ to I₈ while the gate-source voltages thereof are respectively represented by V_(g5) to V_(g8), the drain currents I₅ to I₈ when the differential input voltage V_(i) is inputted can be represented by the following formulas: ##EQU5##

Therefore, formulas (24) and (25) are obtained from the formulas (20), (23) and (21), (22), respectively.

    I.sub.5 =I.sub.8                                           (24)

    I.sub.6 =I.sub.7                                           (25)

As will be apparent from the formulas (24) and (25), the drain current I₅ of the FET Q₅ is equal to the drain current of the FET Q₈ while the drain current I₆ of the FET Q₆ is equal to the drain current I₇ of the FET Q₇. As can also be seen from the formulas (20) to (24), the drain current pairs (I₅, I₆) and (I₇, I₈) will increase or decrease relative to the differential input voltage V_(i) in the quadratic function manner, these pairs being in differential relationship to each other. Thus, the relationship of the drain currents I₅ -I₈ in the FETs Q₅ -Q₈ of the fourth to sixth embodiments with the differential input voltage V_(i) will be as shown in FIG. 9. As will be apparent from such characteristics, the differences between the currents I₅ and I₇ and between the currents I₆ and I₈ become class AB currents.

When the circuits shown in FIGS. 6-8 are used with an output circuit for inverting an adding the currents, a load supplied with the currents through the output circuit can be driven in class AB. Even where a plurality of signal amplification paths are generated, a difference between the paths can be eliminated. Therefore, any phase difference between signals in the high-frequency region can be prevented. Further, it is difficult for any abnormal oscillation to be created since the circuit does not require a loop for class AB drive. In addition, the class AB push-pull drive circuit will be more temperature stable due to compensation of the temperature characteristics between the gate and source of each of the FETs Q₅ -Q₈ through the N-channel FETs Q₉, Q₁₀ and P-channel FETs Q₁₁, Q₁₂ the gates and sources of which are connected together, since the constant voltage circuit 1 and 2 are defined by the FETs Q₉ -Q₁₂.

e) Forms of Constant Voltage Circuit

FIGS. 10A to 10E show five forms of the constant voltage circuit 1 or 2 which are usable in the first to third embodiments of the present invention.

In a constant voltage circuit shown in FIG. 10A, the diode D₁ or D₂ is connected in series with the diode D₃ or D₄. These diodes are further connected in series with two resistors r and to two constant current sources (Q₁₃ or Q₁₄) and (Q₁₅ or Q₁₆). The constant current sources (Q₁₃ or Q₁₄) and (Q₁₅ or Q₁₆) provide constant currents to the diodes (D₁ or D₂) and (D₃ or D₄) to maintain a constant voltage drop E_(s). The resistors r serve to regulate the voltage drop E_(s).

In a constant voltage circuit shown in FIG. 10B, the diode (D₁ or D₂) is formed by a transistor (Q₁₇ or Q₁₈) which is short-circuited between the collector and base thereof. The diode (D₃ or D₄) is formed by a transistor (Q₁₉ or Q₂₀) which is short-circuited between the base and collector thereof.

In a constant voltage circuit of FIG. 10C, the transistor (Q₁₇ or Q₁₈) is of NPN type, rather than PNP type as in FIG. 10B. Similarly, the transistor (Q₁₉ or Q₂₀) is of PNP type, rather than NPN type.

In a constant voltage circuit of FIG. 10D, the collector and base of the transistor (Q₁₇ or Q₁₈) are shunted by an NPN transistor (Q₂₁ or Q₂₂) while the collector and base of the transistor (Q₁₉ or Q₂₀) are shunted by a PNP transistor (Q₂₃ or Q₂₄).

In a constant voltage circuit shown in FIG. 10E, two resistors r are connected between the base of a transistor (Q₂₅ or Q₂₆) and the base of a transistor (Q₂₇ or Q₂₈). The connecting point between these resistors r serves as a voltage application point. The bases of the transistors (Q₂₅ or Q₂₆) and (Q₂₇ or Q₂₈) receive constant currents from two constant current sources (Q₂₉ or Q₃₀) and (Q₃₁ or Q₃₂), respectively. The emitter of the transistor (Q₂₅ or Q₂₆) receives a constant current from a constant current source (Q₃₃ or Q₃₄) while the emitter of the transistor (Q₂₇ or Q₂₈) receives a constant current from a constant current source (Q₃₅ or Q₃₆). A voltage E_(s) appearing between the emitters of the transistors (Q₂₅ or Q₂₆) and (Q₂₇ or Q₂₈) is constant. In other words, this embodiment provides the diode (D₁ or D₂) defined by the transistor (Q₂₅ or Q₂₆) and the upper resistor r and the diode (D₃ or D₄) formed by the transistor (Q₂₇ or Q₂₈) and the lower resistor r.

FIGS. 11A-11C show three different forms of the constant voltage circuit 1 or 2 which are usable in the fourth to sixth embodiments of the present invention.

In a constant voltage circuit shown in FIG. 11A, an N-channel FET (Q₉ or Q₁₀) is connected in series with a P-channel FET (Q₁₁ or Q₁₂). These FETs are further connected in series with two resistors r and two constant current sources (Q₁₃ or Q₁₄) and (Q₁₅ or Q₁₆). The constant current sources (Q₁₃ or Q₁₄) and (Q₁₅ or Q.sub.₁₆) provide constant currents to the FETs (Q₉ or Q₁₀) and (Q₁₁ or Q₁₂) to maintain the illustrated constant voltage drop E_(s). The resistors r serve to regulate the voltage drop E_(s).

A constant voltage circuit shown in FIG. 11B utilizes a P-channel FET (Q₃₇ or Q₃₈) in place of the N-channel FET (Q₉ or Q₁₀) and an N-channel FET (Q₃₉ or Q₄₀) in place of the P-channel FET (Q₁₁ or Q₁₂).

In a constant voltage circuit of FIG. 11C, two resistors r are connected between the gates of FETs (Q₄₁ or Q₄₂) and (Q₄₃ or Q₄₄), the connecting point between these resistors being a voltage application point. The gates of the FETs (Q₄₁ or Q₄₂) and (Q₄₃ or Q₄₄) receive constant currents from two constant current sources (Q₂₉ or Q₃₀) and (Q₃₁ or Q₃₂). The source of the FET (Q₄₁ or Q₄₂) is supplied with a constant current from a constant current source (Q₃₃ or Q₃₄) while the source of the FET (Q₄₃ or Q₄₄) is supplied with a constant current from a constant current source (Q₃₅ or Q₃₆). Therefore, a constant voltage E_(s) will appear between the sources of the FETs (Q₄₁ or Q₄₂) and (Q₄₃ or Q₄₄).

f) Applied Circuit Examples

FIG. 12 shows a class AB output circuit modified from the second embodiment of the present invention, the circuit having a differential output. Although the illustrated circuit includes the same constant voltage circuits 1 and 2 as in FIG. 10B, they may be replaced by those of FIG. 10A and 10C-10E.

The collectors of the transistors Q₁ -Q₄ are respectively connected to the collectors and bases of transistors Q₄₅ -Q₄₈ which function as input diodes of current mirror circuits 3-6. The collector of an output transistor Q₄₉ in the current mirror circuit 3 is connected to the collector of an output transistor Q₅₁ in the current mirror circuit 5. Similarly, the collector of an output transistor Q₅₀ in the current mirror circuit 4 is connected to the collector of an output transistor Q₅₂ in the current mirror circuit 6. Thus, the collectors of the transistors (Q₄₉, Q₅₁) and (Q₅₀, Q₅₂) will provide two different class AB drive currents which are in a differential relationship with each other. Such a differential relationship will be apparent from FIGS. 4 and 5.

FIG. 13 shows a class AB output circuit having a differential output, which is modified from the fifth embodiment of the present invention. In this circuit, the PNP and NPN transistors (Q₁ -Q₄), (Q₁₇ -Q₂₀) and (Q₄₅ -Q₅₂) are replaced by P- and N-channel FETs (Q₅ -Q₈), (Q₃₇ -Q₄₀) and (Q₅₃ -Q₆₀). Although the class AB output circuit uses the same constant voltage circuits as shown in FIG. 11B, they may be replaced by those of FIGS. 11A or 11C.

FIG. 14 shows an operational amplifier formed by the second embodiment of the present invention, which uses the same constant voltage circuits 1 and 2 as shown in FIG. 10B.

The operational amplifier comprises a differential input circuit 7 formed by two NPN transistors Q₆₁ and Q₆₂. A differential input voltage V_(i) is externally applied to the bases of the transistors Q₆₁ and Q₆₂. A current mirror circuit 8 provides, to the emitters of the transistors Q₆₁ and Q₆₂, a constant current which is determined by the supply voltages V_(cc), V_(ss), a resistance R and its own mirror ratio. The emitters of the transistors Q₁₇ and Q₁₈ in the constant voltage circuits 1 and 2 receive currents corresponding to the collector currents of the transistors Q₆₂ and Q₆₁ through current mirror circuits 9 and 10, respectively. Further, the emitter current of the transistor Q₁₉ is maintained at the same amount as that of the transistor Q₂₀ by a current mirror circuit 11. The collectors of the transistors Q₂ and Q₄ are connected to current mirror circuits 12 and 13, respectively. The output transistors Q₆₃ and Q₆₄ of the current mirror circuits 12 and 13 function as output transistors in the illustrated operational amplifier. The collectors of the transistors Q₁₇ and Q₁₉ are respectively connected to those of the transistors Q₆₃ and Q₆₄ through a capacitor C₁.

In such an arrangement, the operational amplifier may have the aforementioned advantages with a class AB output.

FIG. 15 shows another operational amplifier formed by the fifth embodiment of the present invention. This operational amplifier uses the same constant voltage circuits as shown in FIG. 11B and P- or N-channel FETs Q₆₅ -Q₆₈ in place of the PNP or NPN transistors Q₆₁ or Q₆₄ as in FIG. 14.

FIG. 16 shows a further operational amplifier constructed according to the second embodiment of the present invention. Unlike the circuit of FIG. 14, the operational amplifier shown in FIG. 16 utilizes the same constant voltage circuits 1 and 2 as shown in FIG. 10D. Each of current mirror circuits 14 and 15 defining an output circuit includes a PNP transistor Q₆₉ or Q₇₀ having its collector which is driven by V_(ss) or V_(cc), In such an arrangement, therefore, the mirror ratio in the current mirror circuits 14 and 15 can be increased. As a result, a load can be driven by a relatively large current.

FIG. 17 shows a still further operational amplifier constructed according to the second embodiment of the present invention, in which the same constant voltage circuits 1 and 2 as in FIG. 10E are used.

The emitter of a transistor Q₂₅ receives a positive constant current through current mirror circuits 16 and 17, the constant current being determined by the supply voltages V_(cc), V_(ss), resistance R and mirror ratios. More particularly, the aforementioned constant current source Q₃₃ is formed by the resistor R and current mirror circuits 16, 17. Similarly, the emitter of a transistor Q₂₇ receives a constant current from a constant current source Q₃₅ which is formed by the resistor R and current mirror circuit 17. The base of the transistor Q₂₅ receives a constant current from a constant current source Q₂₉ which is defined by the resistor R and current mirror circuits 17, 18 while the base of the transistor Q₂₇ receives a constant current from a constant current source Q₃₁ which is formed by the resistor R and current mirror circuits 19, 20.

The emitter of a transistor Q₂₆ defining the constant voltage circuit 2 receives a constant current from a constant current source Q₃₄ which is defined by the resistor R and current mirror circuits 16, 17 while the emitter of a transistor Q₂₈ defining the constant voltage circuit 2 receives a constant current from a constant current source Q₃₆ which is defined by the resistor R and current mirror circuits 17. The bases of the transistors Q₂₆, Q₂₈ externally receive an intermediate voltage between the positive supply voltage V_(cc) and the negative supply voltage V_(ss), that is, (V_(cc) +V_(ss))/2.

The differential input voltage V_(i) is applied across the bases of the transistors Q₆₅ and Q₆₆ and also across the bases of the transistors Q₆₇ and Q₆₈. The transistors Q₆₅ and Q₆₆ define a differential input circuit, with their emitters receiving a constant current from the current mirror circuit 17. The collectors of the transistors Q₆₅ and Q₆₆ are respectively connected to transistors Q₆₉ and Q₇₀ each of which is short-circuited between the base and collector thereof. The transistor Q₆₉ serves as an input transistor in a current mirror circuit 21 while the transistor Q₇₀ serves as an input transistor in a current mirror circuit 18. The collector of an output transistor Q₇₁ in the current mirror circuit 21 is connected to the bases of transistors Q₇₂ and Q₇₃ in the current mirror circuit 20 while the collector of the transistor Q₇₃ is connected to the bases of transistors Q₂₅ and Q₂₇. The collector of an output transistor Q₇₄ in the current mirror circuit 18 is also connected to the bases of the transistors Q₂₅ and Q₂₇.

The transistors Q₆₇ and Q₆₈ similarly define a differential input circuit. The emitters of the transistors Q₆₇ and Q₆₈ receive a constant current from a current mirror circuit 19. The collector of the transistor Q₆₇ is connected to an input transistor Q₇₅ in a current mirror circuit 22 while the collector of the transistor Q₆₈ is connected to an input transistor Q₇₂ in the current mirror circuit 20. An output transistor Q₇₆ of the current mirror circuit 22 is connected to the base of an output transistor Q₇₄ of the current mirror circuit 18 such that the output transistor Q₇₆ is exactly symmetrical with the transistor Q₇₁.

When, in such a manner, the constant voltage circuit 2 is actuated by each reference voltage (V_(cc) +V_(ss))/2, the base of the transistor Q₂₅ is driven by the output of the differential input circuit formed by the transistors Q₆₅ and Q₆₆ and the base of the transistor Q₂₅ is driven by the output of the differential input circuit defined by the transistors Q₆₇ and Q₆₈, and a load connected to the post-stage can be driven in the class AB drive manner even if a difference between the supply voltages V_(cc) and V_(ss) is relatively low, for example, equal to about 1.5 Volts.

FIG. 18 shows a further operational amplifier constructed according to the fifth embodiment of the present invention. The operational amplifier uses the same constant voltage circuits 1 and 2 as in FIG. 11E and FETs (Q₅ -Q₈), (Q₄₁ -Q₄₄) and (Q₇₇ -Q₈₈) in place of the bipolar transistors (Q₁ -Q₄), (Q₂₅ -Q₂₈) and (Q₆₅ -Q₇₆) which are shown in FIG. 17.

g) Supplement

As described, the output circuits in the first to third embodiments are current mirror circuits formed using bipolar transistors while the output circuits in the fourth to sixth embodiments are current mirror circuits defined by FETs. However, the present invention is not limited to such output circuits.

As shown in FIG. 19, for example, the bases of output transistors Q₈₉ and Q₉₀ may be driven by the collectors of the transistors Q₂ and Q₄. In such a case, the collector currents of the transistor Q₂ and Q₄ are inversely amplified and thus obtained currents flow through the collectors of the transistors Q₈₉ and Q₉₀. Namely, the current output characteristics within the inversely amplifying characteristics of the bipolar transistors Q₈₉ and Q₉₀ are obtained. Alternatively, the current mirror circuits 12 and 13 at the output stage may be comprised of FETs as shown in FIG. 20. In this figure, the transistors Q₉₁ and Q₉₂ which constitute the current mirror circuit 12 are PMOSFETs, respectively, while the transistors Q₉₃ and Q₉₄ which constitute the current mirror circuit 13 are NMOSFETs, respectively. The aforementioned advantages are also obtained by this circuit structure.

As shown in FIG. 21, for example, the bases of output transistors Q₉₅ and Q₉₆ may be driven by the drains of the FETs Q₆ and Q₈. In such a case, the drain currents of the FETs Q₆ and Q₈ are inversely amplified and thus obtained currents flow through the collectors of the transistors Q₉₅ and Q₉₆. Namely, the current output characteristics within the inversely amplifying characteristics of the transistors Q₉₅ and Q₉₆ are obtained. Alternatively, as shown in FIG. 22, the current mirror circuits 12 and 13 at the output stage may be comprised of bipolar transistors. In this figure, the transistors Q₉₇ and Q₉₈ which constitute the current mirror circuit 12 are PNP transistors, respectively, while the transistors Q₉₉ and Q₁₀₀ which constitute the current mirror circuit 13 are NPN transistors, respectively. The aforementioned advantages are also obtained by this circuit structure.

h) Advantages

As described, the class AB push-pull drive circuit of the present invention comprises first to fourth semiconductor elements having their supply electrodes connected together, the voltages between the control electrodes of the first and third semiconductor elements and between the control electrodes of the second and fourth semiconductor elements being maintained constant. Therefore, a current obtained by inverting and adding the drive electrode currents of the first and third semiconductor elements or the drive electrode currents of the second and fourth semiconductor elements becomes a class AB drive current. The class AB push-pull drive circuit does not require any loop for class AB drive. Therefore, an abnormal oscillation will not be produced and a difference between signal amplification paths can be reduced to make the circuit more stable. Where each of the first and second constant voltage circuits for holding the constant voltages is formed by two P-N junctions connected in series with each other, the temperature characteristics of each of the semiconductor elements can be compensated to stabilize the class AB push-pull drive circuit with respect to temperature.

Where an electronic circuit such as operational amplifier is formed by a class AB push-pull drive circuit constructed according to the present invention, current mirror circuits are used as output circuits. If the mirror ratio is increased, a load can be driven by a relatively large current in the class AB drive manner. When the class AB push-pull drive circuit is so constructed that the second constant voltage circuit is actuated by an intermediate voltage between the positive and negative supply voltages as a reference and that the first constant voltage circuit is actuated by a differential input voltage, the post-stage load can be driven in the class AB drive manner even if a difference between the positive and negative voltages is relatively low. In other words, the class AB push-pull drive circuit can be actuated by a relatively low voltage. 

We claim:
 1. A class AB push-pull drive circuit comprising:first to fourth semiconductor elements each having a supply electrode, a drive electrode and a control electrode, the first and second semiconductor elements having a first polarity and the third and fourth semiconductor elements having a second polarity, the supply electrodes of the first to fourth semiconductor elements being connected together, through which a current substantially equal to that of the supply electrode flowing through each of the drive electrodes, the current flowing in each of the drive electrodes being controlled by the corresponding one of the control electrodes; a first constant voltage circuit for maintaining the voltage between the control electrodes of the first and third semiconductor elements constant; a second constant voltage circuit for maintaining the voltage between the control electrodes of the second and fourth semiconductor elements constant; a first output circuit for inverting and adding the currents flowing in the drive electrodes of the first and third semiconductor elements to generate a class AB drive current which is in turn outputted therefrom; and a second output circuit for inverting and adding the currents flowing in the drive electrodes of the second and fourth semiconductor elements to generate another class AB drive current which is in turn outputted therefrom.
 2. A class AB push-pull drive circuit as defined in claim 1 wherein said first output circuit comprises:a first current mirror circuit for outputting a current being a mirror ratio times as large as the current in the drive electrode of the first semiconductor element; and a third current mirror circuit for outputting a current being a mirror ratio times as large as the current in the drive electrode of the third semiconductor element; and wherein the first and third current mirror circuits are connected to each other such that their output currents will be inverted and added to form the class AB drive current.
 3. A class AB push-pull drive circuit as defined in claim 1 wherein said second output circuit comprisesa second current mirror circuit for outputting a current being a mirror ratio times as large as the current in the drive electrode of the second semiconductor element; and a fourth current mirror circuit for outputting a current being mirror ratio times as larger as the current in the drive electrode of the fourth semiconductor element; and wherein the second and fourth current mirror circuits are connected to each other such that their output currents will be inverted and added to form another class AB drive current.
 4. A class AB push-pull drive circuit as defined in claim 1 wherein said first to fourth semiconductor elements are bipolar transistors, the first and second polarities being respectively NPN junction and PNP junction and wherein the supply, drive and control electrodes are emitter, collector and base, respectively.
 5. A class AB push-pull drive circuit as defined in claim 1 wherein said first to fourth semiconductor elements are field-effect transistors, the first and second polarities respectively being N-channel and P-channel types and wherein the supply, drive and control electrodes are source, drain and gate, respectively.
 6. A class AB push-pull drive circuit as defined in claim 1 wherein the first constant voltage circuit includes first temperature characteristic compensating means for compensating the temperature-to-voltage characteristics of the first and third semiconductor elements and wherein the second constant voltage circuit includes second temperature characteristic compensating means for compensating the temperature-to-voltage characteristics of the second and fourth semiconductor elements.
 7. A class AB push-pull drive circuit as defined in claim 6 wherein the first temperature characteristic compensating means comprises a first temperature compensating element having its temperature-to-voltage characteristics substantially equal to those of the first semiconductor element and a third temperature compensating element forwardly connected in series with said first temperature compensating element and having its temperature-to-voltage characteristics substantially equal to those of the third semiconductor element and wherein the second temperature characteristic compensating means comprises a second temperature compensating element having its temperature-to-voltage characteristics substantially equal to those of the second semiconductor element and a fourth temperature compensating element forwardly connected in series with said second temperature compensating element and having its temperature-to-voltage characteristics substantially equal to those of the fourth semiconductor element, a series connection between the first and third temperature compensating elements being forwardly connected in parallel to the first and third semiconductor elements and the series connection between a second and fourth temperature compensating elements being forwardly connected in parallel to the second and fourth semiconductor elements.
 8. A class AB push-pull drive circuit as defined in claim 7 wherein the first to fourth temperature compensating elements are forwardly biased P-N junctions each having its temperature-to-voltage characteristics substantially equal to those of the corresponding one of said first to fourth semiconductor elements and wherein the first and second temperature characteristic compensating means each includes a first constant current source for biasing corresponding two of the first to fourth temperature compensating elements in the forward biased direction.
 9. A class AB push-pull drive circuit as defined in claim 8 wherein the first to fourth semiconductor elements are bipolar transistors and wherein said P-N junction is a P-N junction between the base and emitter of a bipolar transistor which is short-circuited between the collector and base thereof.
 10. A class AB push-pull drive circuit as defined in claim 8 wherein the first to fourth semiconductor elements are bipolar transistors and wherein the first and second temperature characteristic compensating means each includes a bipolar biasing transistor the base of which is driven by the first constant current source, said forwardly biased P-N junctions being P-N junctions between the base and emitter of bipolar transistors the bases of which are driven by corresponding bipolar biasing transistors.
 11. A class AB push-pull drive circuit as defined in claim 8 wherein the first to fourth semiconductor elements are bipolar transistors and wherein the first and second temperature characteristic compensating means each includes a second constant current source, each of said forwardly biased P-N junctions being a P-N junction between the base and emitter of corresponding one of the bipolar transistors the base of which is driven by the second constant current source.
 12. A class AB push-pull drive circuit as defined in claim 7 wherein the first to fourth temperature compensating elements are field-effect transistors, each of said field-effect transistors having its temperature-to-voltage characteristics substantially equal to those of the first to fourth semiconductor elements and being short-circuited between gate and drain thereof and wherein the first and second temperature characteristic compensating means each include a first constant current source for biasing corresponding two of the first to fourth temperature compensating elements in the forward biased direction.
 13. A class AB push-pull drive circuit as defined in claim 7 wherein the first to fourth temperature compensating elements are field-effect transistors, each of said field-effect transistors having its temperature-to-voltage characteristics substantially equal to those of the first to fourth semiconductor elements and being short-circuited between gate and drain thereof and wherein the first and second temperature characteristic compensating means each includes a first constant current source for biasing corresponding two of the first to fourth temperature compensating elements in the forward biased direction and a second constant current source for driving the gates of corresponding two of the first to fourth temperature compensating elements.
 14. A class AB push-pull drive circuit as defined in claim 1 wherein a differential input voltage is applied directly between the control electrodes of the first and second semiconductor elements and wherein another differential input voltage is applied between the control electrodes of the third and fourth semiconductor elements through the first and second constant voltage circuits.
 15. A class AB push-pull drive circuit as defined in claim 1 wherein a differential input voltage is applied directly between the control electrodes of the third and fourth semiconductor elements and wherein another differential input voltage is applied between the control electrodes of the first and second semiconductor elements through the first and second constant voltage circuits.
 16. A class AB push-pull drive circuit as defined in claim 1 wherein a differential input voltage is applied between the control electrodes of the first and second semiconductor elements through parts of the first and second constant voltage circuits and wherein another differential input voltage is applied between the control electrodes of the third and fourth semiconductor elements through the other parts of the first and second constant voltage circuits.
 17. A class AB push-pull drive circuit as defined in claim 1, further comprising a differential input circuit responsive to a differential input voltage to generate a differential current which is in turn supplied to the first and second constant voltage circuits and wherein the first and second constant voltage circuits are responsive to the differential current to execute the constant voltage maintaining function.
 18. A class AB push-pull drive circuit as defined in claim 1, further comprising:a first differential input circuit driven by a constant current and being responsive to a differential input voltage to output a first differential current; and a second differential input circuit driven by said constant current and being responsive to the differential input voltage to output a second differential current and wherein the first constant voltage circuit is directly or indirectly supplied with the first and second differential currents to execute the constant voltage maintaining function and the second constant voltage circuit being responsive to an intermediate voltage between positive and negative supply voltages as a reference to execute the constant voltage maintaining function.
 19. A class AB push-pull drive circuit comprising:first to fourth semiconductor elements, the first and second semiconductor elements receiving a differential input signal, each of the first to fourth semiconductor elements having a supply electrode, a drive electrode and a control electrode, the first and second semiconductor elements having a first polarity and the third and fourth semiconductor elements having a second polarity, the supply electrodes of the first to fourth semiconductor elements being connected together, a current substantially equal to that of the supply electrode flowing through each of the drive electrodes, the current flowing in each of the drive electrodes being controlled by the corresponding one of the control electrodes; a first constant voltage circuit for maintaining the voltage between the control electrodes of the first and third semiconductor elements constant; a second constant voltage circuit for maintaining the voltage between the control electrodes of the second and fourth semiconductor elements constant; and a first output circuit for inverting and adding the currents flowing in the drive electrodes of the first and third semiconductor elements to generate a class AB drive current which is in turn outputted therefrom. 